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Activity Number:
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334
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Type:
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Contributed
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Date/Time:
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Tuesday, August 8, 2006 : 2:00 PM to 3:50 PM
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Sponsor:
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Section on Physical and Engineering Sciences
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| Abstract - #305639 |
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Title:
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A Discrete Degradation Model for Ultra-Thin Gate Oxide Data
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Author(s):
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Shuen-Lin Jeng*+ and Min-Hsiung Hsien
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Companies:
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Tunghai University and Tunghai University
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Address:
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No 181 Sec 3 TaichungKan Road, Taichung, 407, Taiwan
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Keywords:
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discrete degradation ; compound Poisson ; breakdown ; nano meter
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Abstract:
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Using degradation measurements is getting more important in reliability study because of few failures observed during short experiment time. Assessing the reliability by the degradation processes of gate oxides has been investigated for decades in physics and microelectronics. Recently, discrete degradations have been observed in the breakdown of ultra-thin oxides, which are only few nano meters in thickness. Based on the physical properties of the gate oxides, we develop a nonhomogenous compound Poisson model incorporating different stress levels. We provide the likelihood function for model parameters and derive the first passage time distributions for breakdown times. Asymptotic confidence interval for quantiles of breakdown times is developed. A simulation study is set up for this discrete degradation model to investigate the finite sample properties.
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